WebSemiconductor & System Solutions - Infineon Technologies WebThe low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry. Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free Description Absolute Maximum Ratings Parameter Max. Units
IRF8010 - IR - FETs - Single - Kynix Semiconductor
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IRF8010 datasheet - 100V Single N-Channel HEXFET Power …
WebTechnical Specifications Infineon IRF8010PBF technical specifications, attributes, and parameters. MOSFET, Power;N-Ch;VDSS 100V;RDS (ON) 12Milliohms;ID 80A;TO-220AB;PD 260W;-55deg. Transistor MOSFET N Channel 100 Volt 80a 3-Pin 3+ Tab TO-220AB. Single N-Channel 100 V 15 mOhm 81 nC HEXFET® Power Mosfet - TO-220-3. CAD Models WebIRF8010PbF 2 www.irf.com S D G Static @ T J = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units V(BR)DSS Drain-to-Source Breakdown Voltage 100 ––– … WebNo. Part Name Description Manufacturer; 1: IRF8010: 100V Single N-Channel HEXFET Power MOSFET in a TO-220AB package: International Rectifier: 2: IRF8010 L: 100V Single N-Channel HEXFET Power MOSFET in a TO-262 package philosopher immanuel kaym